any changing of specification will not be informed individual 2SC4081F npn silicon general purpose transistor r o h s c o m p l i a n t p r o d u c t low cob. cob = 2.0 pf (typ.) complements the 2sa1576a collector 3 1 base 2 emitter dim min max a 1.800 2.20 0 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1 .400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0 .720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323 k j c h l a b s g v 3 1 2 d top view 1 2 3 http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 1 of 3 a b sol u t e m axi m u m r ati n g s a t t a = 2 5 : pa ra m e te r s y m b o l ra ti n g s u n i t j unc t i on t e mp er at ur e t j + 1 5 0 s t or ag e t emp e r a t u r e t s t g - 5 5 ~ + 1 5 0 c o l l e c t o r t o b a s e v ol t a g e v c b o 6 0 v c o l l e c t o r t o e m i tt e r v ol t a g e v c e o 5 0 v e m i t t e r t o b a s e v ol t a g e veb o 7 v c o l l e c t o r c u rr en t i c 1 5 0 ma t o t al p ow er d is s ip at i on p d 22 5 m w characteristics a t t a = 2 5 : parameter symbol min typ. max uni t test conditions collector - base breakdown voltage bv cbo 60 - - v i c = 5 0ua collector - emitter breakdown voltage bv ceo 50 - - v i c =1ma emitter - base breakdown voltage bv ebo 7 - - v i e =50ua collector - emitter breakdown volta ge i cbo - - 100 na v cb =60v emitter - base cutoff current i ebo - - 100 na v eb = 7 v collector saturation voltage 1 v ce(sat) - - 400 m v i c =50ma, i b =5ma dc current gain h fe 120 - 560 - v ce = 6 v, i c = 1m a gain - bandwidth product ft - 180 - mhz v ce = - 12 v, i c = 2 ma, f=10 0mhz output capacitance cob - 2 3.5 pf v cb = - 12 v, f=1mhz , i e =0 range 120 - 270 180 - 390 270 - 560 *pulse test: pulse width = 380us, duty cycle 2% classification of h fe rank q r s feature marking code: 5bx x = hfe rank code ??
any changing of specification will not be informed individual 2SC4081F npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 2 of 3 characteristics curve
any changing of specification will not be informed individual 2SC4081F npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 3 of 3
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